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Semiconductor interconnects

Aluminium Bonding Wire for Semiconductor Packaging

Aluminium bonding wire is drawn aluminium or aluminium-silicon wire, from about 18 µm to 500 µm in diameter, that is ultrasonically wedge-bonded at room temperature to connect chips to lead frames, substrates and terminals. Fine AlSi1 wire serves sensors, hybrids and chip-on-board work; heavy high-purity wire carries the current in power modules. This guide covers grades, sizes, process, testing and how to specify wire from Metline.

Electronic power device with aluminium wire bonds connecting the chip to its terminals
Diameter
approx. 18 – 500 µm
Fine wire
AlSi1, AlMg1
Heavy wire
4N / 5N Al, micro-alloyed
Process
Ultrasonic wedge bonding
Overview

What is aluminium bonding wire?

Wire bonding is still the most common way to make electrical connections inside a semiconductor package. Gold and copper wire dominate ball bonding in integrated circuits; aluminium wire dominates wedge bonding, and above all the heavy-wire connections in power electronics.

Aluminium wire is bonded by ultrasonic energy without heating the package. A wedge tool presses the wire onto the pad and vibrates it, scrubbing away oxide and forming a solid-state weld. Because no flame-off ball is formed and no heated stage is required, aluminium wedge bonding suits temperature-sensitive assemblies, hermetic ceramic packages, and large power modules that would be difficult to heat uniformly.

Aluminium bonding to an aluminium chip pad is also a single-metal joint. That avoids the intermetallic growth that can weaken gold-to-aluminium bonds at high temperature, which is one reason aluminium wire has a long track record in military, automotive and industrial electronics.

Wire types

Fine wire and heavy wire: two different products

Aluminium bonding wire is really two product families, with different alloys, tempers and uses. The usual dividing line is about 100 µm (4 mil).

PropertyFine aluminium wireHeavy aluminium wire
Typical diameterapprox. 18 – 75 µm (0.7 – 3 mil)approx. 100 – 500 µm (4 – 20 mil)
Typical materialAlSi1 (Al + 1 % Si); AlMg1 as an alternative99.99 % or 99.999 % Al; micro-alloyed grades
ConditionHard-drawn or stress-relieved; low elongation (a few %)Fully annealed, soft; high elongation (often 10 – 30 %)
Main jobSignal and low-current links on small padsHigh-current links in power devices, often in parallel
Typical packagesChip-on-board, hybrids, sensors, MEMS, hermetic ceramic and metal cans, RF modulesIGBT, MOSFET and SiC modules, power discretes (TO packages), battery connections
BonderFine-wire wedge bonderHeavy-wire wedge bonder

The silicon in fine wire is not an accident: pure aluminium is too soft to draw reliably down to 25 µm and still hold the breaking load needed for looping, so about 1 % silicon (or magnesium) is added to harden it. In heavy wire the priority reverses: softness protects the chip during bonding, so very high purity is used.

Materials

Aluminium bonding wire grades

AlSi1 fine wire

The default fine wedge wire. Silicon raises strength for drawing and looping. Used widely for chip-on-board, hybrid circuits and sensors. A historic reference is ASTM F487, now withdrawn but still cited in some purchase specifications.

AlMg1 fine wire

Magnesium-strengthened alternative to AlSi1. Magnesium stays in solid solution, avoiding silicon precipitates, and some users report steadier properties after high-temperature storage.

4N heavy wire (99.99 % Al)

The workhorse for power modules and power discretes. Soft, conductive and easy to bond on aluminium metallisation and nickel-plated substrates.

5N heavy wire (99.999 % Al)

Highest purity for the softest wire and the most consistent deformation, preferred for thin or sensitive chips.

Corrosion-resistant grades

Small, controlled additions (nickel or other elements in the ppm range) improve resistance to humidity and slow grain coarsening. Very pure aluminium can corrode faster in hot, humid conditions, so these grades suit unsealed or gel-filled modules.

Higher-reliability alloys

Grades with dispersed particles or alloying that resist recrystallisation at high junction temperature, aimed at extending power-cycling life in automotive and SiC modules.

Proprietary alloy names differ between wire makers. Specify the required composition limits, breaking load and elongation rather than a brand name, so equivalent material can be qualified.

Dimensions

Standard diameters, cross-section and resistance

Bonding wire diameters are quoted in micrometres or mil. The table gives the cross-sectional area, the calculated DC resistance per metre for high-purity aluminium at 20 °C (resistivity about 2.65 µΩ·cm) and the mass per metre (density 2.70 g/cm³). These are geometric calculations; AlSi1 has a slightly higher resistivity than pure aluminium. Breaking load and elongation are set by the purchase specification and reported per spool.

Diameter (µm)Diameter (mil)Area (mm²)DC resistance (Ω/m)Mass (g/m)Family
180.70.00025104.10.0007Fine
251.00.0004954.00.0013Fine
321.30.0008033.00.0022Fine
381.50.0011323.40.0031Fine
502.00.0019613.50.0053Fine
753.00.004426.00.012Fine
1003.90.007853.40.021Heavy
1254.90.01232.20.033Heavy
1505.90.01771.50.048Heavy
2007.90.03140.8440.085Heavy
2509.80.04910.5400.133Heavy
30011.80.07070.3750.191Heavy
38015.00.11340.2340.306Heavy
50019.70.19630.1350.530Heavy

Typical supply range

Fine wire
approx. 18 – 75 µm, AlSi1 or AlMg1, on 2-inch spools
Heavy wire
approx. 100 – 500 µm, 4N / 5N Al and alloyed grades, on larger spools for heavy-wire bonders
Properties
Breaking load, elongation and temper to your specification
Documentation
Certificate of conformance per lot with diameter, breaking load and elongation
How to choose

How to select aluminium bonding wire

  1. Define the connectionSignal or power? Current per connection, pulse duty, and allowed temperature rise along the wire span. For power, decide how many wires in parallel you will use and size each for an even share.
  2. Match the padWire diameter must suit the pad size and pitch. As a rough guide, the flattened bond is about 1.5 – 3 times the wire diameter in width, and the pad must contain it with margin.
  3. Choose the gradeAlSi1 or AlMg1 for fine wire; 4N or 5N for heavy wire; a corrosion-resistant or high-reliability grade where humidity or high junction temperature is expected.
  4. Set mechanical propertiesAgree breaking load and elongation ranges with your process team. They control loop height, sway and how the wire deforms at the bond.
  5. Check the equipmentConfirm wedge tool, wire guide, clamp and spool type for your bonder.
  6. QualifyPull, shear and cross-section tests, then reliability tests appropriate to the product before release.
Process

Ultrasonic wedge bonding: what drives a good bond

The first bond is made on the chip, the wire is looped to the second pad, the second bond is made, and the wire is torn or cut. Because a wedge bond has a direction, the bonder rotates the part or head so that the wire leaves along the bond axis. Key settings are bond force, ultrasonic power, bond time and the loop profile.

Common faults include under-bonded interfaces (weak, lift off in pull testing), over-deformed bonds that thin the heel, heel cracks from poor loop geometry, and chip cratering when force or energy is too high. Clean pads matter as much as wire quality: organic contamination and thick oxides on the pad are frequent root causes of non-stick.

Failure modeTypical causeWhat to change
Non-stick on padContamination, thick oxide, low energyPlasma clean pads; raise power or time
Heel break in pull testOver-deformation, sharp tool, low loopReduce deformation; adjust loop; check tool wear
Bond lift-off after cyclingThermal-expansion mismatch fatigueSofter or alloyed wire; process optimisation; consider ribbon or copper
Chip crateringExcessive force or ultrasonic energyLower parameters; softer wire
Wire sway / saggingWire too soft or loops too longAdjust breaking load or loop geometry
Quality

Testing and qualification

Incoming wire is checked for diameter, breaking load, elongation, surface cleanliness and winding quality. Finished bonds are checked by the assembler.

  • Destructive pull test: MIL-STD-883 Method 2011 is the classic reference, with minimum pull forces by wire diameter; DVS 2811 is widely used for heavy wire
  • Non-destructive pull: MIL-STD-883 Method 2023 for high-reliability lots
  • Shear testing: for heavy-wire bonds per DVS 2811 and internal procedures
  • Visual inspection: bond shape and placement to MIL-STD-883 Method 2010 or equivalent
  • Reliability: temperature cycling, high-temperature storage, humidity and, for power modules, power cycling under AQG 324
Applications

Where aluminium bonding wire is used

Power modules

Heavy wire in IGBT, MOSFET and SiC modules for traction inverters, drives, solar and wind converters.

Power discretes

TO-220, TO-247 and similar packages where one or more heavy wires connect the source to the lead.

Chip-on-board and hybrids

Fine AlSi1 wire bonded directly to circuit boards and thick-film substrates.

Sensors and MEMS

Pressure, inertial and automotive sensors where room-temperature bonding protects the device.

Hermetic packages

Ceramic and metal packages for aerospace and defence electronics with aluminium-to-aluminium bonds.

Battery packs

Heavy aluminium wire bonded between cylindrical cells and busbars, acting as a conductor and a cell-level fuse in some designs.

Sources

References and standards

  1. ASTM F487 – Standard Specification for Fine Aluminum–1 % Silicon Wire for Semiconductor Lead-Bonding (withdrawn 2023)
  2. MIL-STD-883, Methods 2010, 2011 and 2023 – Internal visual inspection, bond strength, non-destructive bond pull
  3. DVS 2811 – Testing of wire bonds
  4. ECPE AQG 324 – Qualification of power modules for automotive power electronics
  5. JEDEC JESD22-A104 – Temperature cycling
FAQ

Aluminium (aluminum) bonding wire: frequently asked questions

What is aluminium bonding wire used for?

It makes internal connections in semiconductor devices: fine wire links chip pads to boards, hybrids and sensor packages, and heavy wire carries current from power chips to substrates and terminals in power modules and discretes.

Why does fine aluminium wire contain 1 % silicon?

Pure aluminium is too soft to draw to 25 µm and keep a usable breaking load. Adding about 1 % silicon (or magnesium in AlMg1 wire) strengthens it enough for drawing, spooling and stable loops.

What is the difference between fine and heavy aluminium bonding wire?

Fine wire (roughly 18 – 75 µm) is hard AlSi1 or AlMg1 for signal connections. Heavy wire (roughly 100 – 500 µm) is soft, high-purity aluminium for power connections. They use different bonders and tools.

Is aluminium bonding wire bonded with heat?

No. Aluminium is normally wedge-bonded ultrasonically at room temperature, which is one of its advantages for heat-sensitive assemblies and large modules.

When should I switch from aluminium wire to ribbon or copper?

When the number of parallel heavy wires becomes impractical, or when power-cycling life is not enough. Aluminium ribbon gives more current per bond with a lower loop; copper wire gives longer life but needs a protected chip metallisation and a narrower process window.

Can you match my existing wire specification?

Yes. Send diameter, grade, breaking load and elongation ranges, spool type and quantities. Metline proposes matching material with lot certificates for your qualification.

Need aluminium bonding wire?

Send the diameter, grade, mechanical properties, spool type and quantity. We reply with supply options, documents and delivery terms.